Theoretical Study of Recrystallization Process of Amorphous Ge Layer Subjected to Pulsed Excimer (XeCl) Laser Radiation-Reference-Cited by-同舟云学术

Theoretical Study of Recrystallization Process of Amorphous Ge Layer Subjected to Pulsed Excimer (XeCl) Laser Radiation

Published:1997 Issue:7 Volume:32 Page:983-987
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Cryst. Res. Technol.

Author:

Klinger D.,Auleytner J.,??ymierska D.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference10 articles.

1. : Handbook of Crystal Growth, Vol. 3, Ed.D.T.J. Hurle Chapter 8: Rapid Solidification of Silicon and Some Silicides by Pulsed Laser Annealing Elsevier Science B.V. 1994

2. Solid‐phase growth of large aligned grains during scanned laser crystallization of amorphous Ge films on fused silica

3. : Laser and Electron Beam Processing of Materials Part IV: Annealing and Recrystallization Academic Press 1980

4. Theoretical Study of Ge Implanted Silicon Subjected to Pulsed Excimer (XeCl) Laser Radiation

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