DCXS and RHEED characterization of effectiveness of annealing implanted Si crystals by using pulsed UV excimer laser and sample scanning technique-Reference-Cited by-同舟云学术

DCXS and RHEED characterization of effectiveness of annealing implanted Si crystals by using pulsed UV excimer laser and sample scanning technique

Published:1994 Issue:1 Volume:29 Page:93-97
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Cryst. Res. Technol.

Author:

Auleytner J.,Kozankiewicz B.,Regiński K.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference4 articles.

1. X-ray and RHEED Characterization of Ge Ions-Implanted Si Crystals Subjected to Pulsed-Laser Annealing

2. Composition and structure of Si–Ge layers produced by ion implantation and laser melting

3. Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°K

4. : Proceedings of the International Conference on Ion Implantation and Ion Beam Equipment held at Elenite 1990, World Scientific, Singapore, New Jersey, London, Hong Kong 1991, p. 28

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1. Nanostructure of near-surface Si layers formed by implantation and pulsed laser annealing;Journal of Alloys and Compounds;2004-01

2. Theoretical Study of Ge Implanted Silicon Subjected to Pulsed Excimer (XeCl) Laser Radiation;Crystal Research and Technology;1996

3. Comparative studies of ion-implanted crystals subjected to pulsed-laser and thermal annealings by means of X-ray and electron-optical methods;Physica Status Solidi (a);1995-07-16

4. X-Ray Investigations of Dislocations in an Implanted Si Crystal Induced by Pulsed Laser Annealing;Physica Status Solidi (a);1995-02-16