Nanostructure of near-surface Si layers formed by implantation and pulsed laser annealing
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference23 articles.
1. Electrical signatures and thermal stability of interstitial clusters in ion implanted Si
2. Effect of implant temperature on secondary defects created by MeV Sn implantation in silicon
3. Cross-sectional transmission electron microscopy analysis of {311} defects from Si implantation into silicon
4. Effect of ion mass on the evolution of extended defects during annealing of MeV ion-implanted p-type Si
5. Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon
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2. Characterization of rapidly solidified Ni–Si and Co–Al eutectic alloys in drop tube;Journal of Non-Crystalline Solids;2010-03
3. Solidification of Al-50 at.%Si alloy in a drop tube;MAT SCI ENG A-STRUCT;2004
4. Evolution of defect structure of Ge-implanted Si crystal during nanosecond laser annealing;The European Physical Journal Applied Physics;2004-07
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