Autodoping during the deposition of epitaxial Silicon layers from the gas phase (I). Autodoping from the gas phase
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference7 articles.
1. Reduction of Autodoping
2. The Dependence on Deposition Conditions of the Dopant Concentration of Epitaxial Silicon Layers
3. Anomalous Impurity Diffusion in Epitaxial Silicon near the Substrate
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5. Temperature dependence of doping element incorporation with the chemical vapour deposition of epitaxial silicon (V). Incorporation of arsenic
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. The current understanding of epitaxial silicon layer doping in the light of modelling and theory development (X). Once more autodoping mechanism;Crystal Research and Technology;1990-07
2. A suplementary consideration of lateral autodoping;Crystal Research and Technology;1988-05
3. Autodoping of epitaxial silicon layers (II) diffusion-induced autodoping;Crystal Research and Technology;1985-05
4. Epitaxial Silicon: Material Characterization;Vlsi Handbook;1985
5. The Incorporation of Boron in Silicon Epitaxial Layer Growth in the Presence of Small Amounts of Water;Journal of The Electrochemical Society;1984-08-01
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