Author:
Kühne H.,Gaworzewski P.,Malze W.
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference10 articles.
1. Doping in chemically vapour deposited epitaxial silicon
2. : Physics & Chemistry of the Impurity Diffusion & Oxidation of Silicon, in: Silicon Integrated Circuits, Part B, edited by , New York 1981
3. Impurity Distribution in Epitaxial Growth
4. p−nJunctions Produced by Growth Rate Variation
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