Reduction of Autodoping-Reference-Cited by-同舟云学术

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Reduction of Autodoping

Published:1975-12-01 Issue:12 Volume:122 Page:1705-1709
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Bozler Carl O.¹

Affiliation:

1. Sperry Rand Corporation, Gainesville, Florida 32601

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2134114/pdf

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling the influence of arsenic autodoping on the sheet resistance of epitaxial silicon films and its application to statistical process control (SPC);IEEE Transactions on Semiconductor Manufacturing;2003-02

2. Silicon Epitaxy by Chemical Vapor Deposition;Handbook of Thin Film Deposition Processes and Techniques;2001

3. Control of Arsenic Doping during Low Temperature CVD Epitaxy of Silicon (100);Journal of The Electrochemical Society;2000

4. Boron Autodoping in Single‐Wafer Epitaxy of Silicon at Reduced Pressure;Journal of The Electrochemical Society;1999-01-01

5. Thin Film Deposition;Fundamentals of Semiconductor Processing Technology;1995

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