Comparing Isoelectric Point and Surface Composition of Plasma Modified Native and Deposited SiO2 Films Using Contact Angle Titrations and X-ray Photoelectron Spectroscopy-Reference-Cited by-同舟云学术

Comparing Isoelectric Point and Surface Composition of Plasma Modified Native and Deposited SiO2 Films Using Contact Angle Titrations and X-ray Photoelectron Spectroscopy

Published:2011-07-13 Issue:10 Volume:8 Page:951-964
ISSN:1612-8850
Container-title:Plasma Processes and Polymers
language:en
Short-container-title:Plasma Processes Polym.

Author:

Trevino Kristina J.,Shearer Jeffrey C.,Tompkins Brendan D.,Fisher Ellen R.

Funder

National Science Foundation

Publisher

Wiley

Subject

Polymers and Plastics,Condensed Matter Physics

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/ppap.201100010/fullpdf

Reference48 articles.

1. Nitrogen Bonding Configurations of SiO[sub x]N[sub y] Thin Films in Power MOSFET Gate Interfaces

2. Influence of defects in a silicon dioxide thin layer on the processes of silicidation in the Fe/SiO2/Si(001) system

3. Microwave irradiation-assisted method for the deposition of adherent oxide films on semiconducting and dielectric substrates

4. Acid−Base Characterization of Aluminum Oxide Surfaces with XPS

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