Author:
Fazio E.,Monforte F.,Neri F.,Bonsignore F.,Curro G.,Camalleri M.,Cali D.
Publisher
The Electrochemical Society
Subject
Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
2. Structural analysis of silicon oxynitride films deposited by PECVD
3. D. Briggs and M. P. Seah , inPractical Surface Analysis, pp. 201–256, Wiley, New York (1996).
4. M. S. Sze ,Physics of Semiconductor Devices, 2nd ed., Wiley, New York (1981).
5. D. K. Schroeder ,Semiconductor Materials and Device Characterization, Wiley, New York (1990).
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献