Author:
Xiao D.,Schreurs D.,Van Niekerk C.,De Raedt W.,Derluyn J.,Germain M.,Nauwelaers B.,Borghs G.
Subject
Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Computer Science Applications
Reference16 articles.
1. High power microwave GaN/AlGaN HEMTs on silicon carbide;Sheppard;IEEE Electron Device Letters,1999
2. SiC and GaN transistors-is there one winner for microwave power application;Trew;Proceedings of the IEEE,2002
3. Growth and application of group III-nitrides;Ambacher;J Phys D,1998
4. 280W output power single-ended amplifier using single-die GaN-FET for W-CDMA cellular base stations;Wakejima;IEEE Electron Lett,2005
5. H. Sano, K. Otobe, Y. Tateno, N. Adachi, S. Mizuno, A. Kawano, J. Nikaido, and S. Sano, A 1.8-2.3GHz wide-band and compact power amplifier module using AlGaN/GaN HEMTs, Asia-Pacific Microwave Conference, Suzhou, China, December 4-7, 2005.
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献