A scalable GaN HEMT large-signal model for high-efficiency RF power amplifier design-Reference-Cited by-同舟云学术

A scalable GaN HEMT large-signal model for high-efficiency RF power amplifier design

Author:

Xu Yuehang¹,Fu Wenli²,Wang Changsi¹,Ren Chunjiang³,Lu Haiyan³,Zheng Weibin⁴,Yu Xuming⁴,Yan Bo¹,Xu Ruimin¹

Affiliation:

1. Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China (UESTC), Chengdu 611731, P.R. China

2. National Key Laboratory of Science and Technology on Space Microwave, China Academy of Space Technology (Xi’an), Xi’an 710100, China

3. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing 210016, P.R. China

4. Nanjing Electronic Devices Institute, Nanjing 210016, P.R. China

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering,General Physics and Astronomy,Electronic, Optical and Magnetic Materials

Link

Reference20 articles.

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