Ultra‐Steep Slope Impact Ionization Transistors Based on Graphene/InAs Heterostructures-Reference-Cited by-同舟云学术

Ultra‐Steep Slope Impact Ionization Transistors Based on Graphene/InAs Heterostructures

Published:2020-09-29 Issue:1 Volume:2 Page:2000039
ISSN:2688-4062
Container-title:Small Structures
language:en
Short-container-title:Small Structures

Author:

Liu Yuan¹²,Guo Jian¹,Song Wenjing²,Wang Peiqi³,Gambin Vincent⁴,Huang Yu¹⁵,Duan Xiangfeng³⁵^ORCID

Affiliation:

1. Department of Materials Science and Engineering University of California Los Angeles CA 90095 USA

2. School of Physics and Electronics Hunan University Changsha 410082 China

3. Department of Chemistry and Biochemistry University of California Los Angeles CA 90095 USA

4. NG NEXT Northrop Grumman Aerospace Systems Redondo Beach CA 90278 USA

5. California Nanosystems Institute University of California Los Angeles CA 90095 USA

Funder

Office of Naval Research

Office of Naval Reactors

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/sstr.202000039

Reference49 articles.

1. Band-to-Band Tunneling in Carbon Nanotube Field-Effect Transistors

2. Tunnel field-effect transistors as energy-efficient electronic switches

3. Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices

4. b)K.-S.Li P.-G.Chen T.-Y.Lai C.-H.Lin C.-C.Cheng C.-C.Chen Y.-J.Wei Y.-F.Hou M.-H.Liao M.-H.Lee presented at IEEE Int. Electron Devices Meeting Washington DC December2015;

5. c)A. I.Khan C. W.Yeung C.Hu S.Salahuddin presented at IEEE Int. Electron Devices Meeting Washington DC December2011.

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