Synthesis of New Nitride Alloys with Mg by Plasma‐Assisted Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

Synthesis of New Nitride Alloys with Mg by Plasma‐Assisted Molecular Beam Epitaxy

Published:2020-06-08 Issue:9 Volume:257 Page:2000122
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Gherasoiu Iulian¹^ORCID,Man Yu Kin²³,Ekinci Huseyin⁴⁵,Cui Bo⁴,Hawkridge Michael⁶,Kuryatkov Vladimir⁷,Gaddy Matthew⁷,Nikishin Sergey A.⁷,Walukiewicz Wladek³

Affiliation:

1. College of Engineering SUNY Polytechnic Institute Utica NY 13502 USA

2. Department of Physics City University of Hong Kong 83 Tat Chee Ave. Kowloon Tong Hong Kong

3. Material Sciences Division Lawrence Berkeley National Laboratory Berkeley CA 94720 USA

4. Waterloo Institute for Nanotechnology (WIN) University of Waterloo 200 University Ave. West Waterloo Ontario N2L 3G1 Canada

5. Department of Physics Erzincan Binali Yıldırım University 24100 Erzincan Turkey

6. PANalytical 117 Flanders Rd. Westborough MA 01581 USA

7. Nano Tech Center Department of Electrical and Computer Engineering Texas Tech University 2500 Broadway Lubbock TX 79409 USA

Funder

Defense Advanced Research Projects Agency

City University of Hong Kong

U.S. Department of Education

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202000122

Reference40 articles.

1. Unusual properties of the fundamental band gap of InN

2. Band Gap of Hexagonal InN and InGaN Alloys

3. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

4. Fermi-level stabilization energy in group III nitrides

5. Synthesis of cubic zirconium and hafnium nitride having Th3P4 structure

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1. Electrical Performance of Sputtered Epitaxial Magnesium Oxide on n-Type Gallium Nitride Metal–Oxide–Semiconductor Devices;IEEE Transactions on Electron Devices;2023-07

2. Influence of Mg doping on In adsorption and In incorporation in (In,Ga)N superlattices;Journal of Applied Physics;2020-08-28