Nitrogen‐Induced Changes in the Electronic and Structural Properties of 4H‐SiC (0001)/SiO 2 Interfaces
Author:
Affiliation:
1. Department of Physics Auburn University Auburn AL 36849 USA
2. Department of Physics and Astronomy Department of Materials Science & Engineering Rutgers University Piscataway NJ 08854 USA
Funder
Army Research Laboratory
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202100224
Reference57 articles.
1. Material science and device physics in SiC technology for high-voltage power devices
2. Silicon carbide: A unique platform for metal-oxide-semiconductor physics
3. Advances in SiC MOS Technology
4. Improved oxidation procedures for reduced SiO2/SiC defects
5. Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Trap passivation of 4H-SiC/SiO2 interfaces by nitrogen annealing;Journal of Applied Physics;2023-06-06
2. The initial oxidation of the 4H-SiC (0001) surface with C-related point defects: Insight by first-principles calculations;Applied Surface Science;2023-03
3. Study of the Bonding Characteristics at β-Ga2O3(201)/4H-SiC(0001) Interfaces from First Principles and Experiment;Crystals;2023-01-17
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