Preparation of cross-sectional TEM samples with observable thin sections at desired regions of non-uniform surfaced semiconducting devices
Author:
Publisher
Wiley
Subject
Anatomy
Reference5 articles.
1. Cross‐sectional specimens for transmission electron microscopy
2. The preparation of cross-section specimens for transmission electron microscopy
3. Comparison of Ion-Milling Techniques For Cross-Sectional TEM of Semiconductors
4. A procedure to prepare cross-sectional samples for TEM
5. Transmission electron microscopy of cross sections of large scale integrated circuits
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1. Wet oxidation of amorphous Si‐Ge layer deposited on Si(001) at 800 and 900 °C;Journal of Applied Physics;1992-11
2. Formation of MoS2phase in Al2O3, ZrO2, and SiO2through ion implantation of constituent elements;Journal of Applied Physics;1990-11-15
3. Diffusion of sputtered inconel 617 coatings in titanium;Metallurgical Transactions A;1990-06
4. Characterization of sputtered Inconel 617;Journal of Materials Science;1990-01
5. A Streamlined Technique for Preparation of Transverse Specimens for Transmission Electron Microscopy;MRS Proceedings;1990
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