Optical constants of n- and p-type GaAs between 2.5 and 3.5 eV

Author:

Vigil E.,Rodríguez J. A.,Alvarez R. Pérez

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Concentration dependence of the refractive index for n ‐ and p ‐type GaAs between 1.2 and 1.8 eV

2. Concentration dependence of the absorption coefficient forn− andp−type GaAs between 1.3 and 1.6 eV

3. , and , Electronic States and Optical Transitions in Solids, Pergamon Press, 1975 (p. 159).

4. REFLECTANCE OF GaAs, GaP, AND THE GaAs1−x Px ALLOYS

5. Causality and the Dispersion Relations, Univ. of Maryland, Phys. Dept., Techn. Rep. No. 27 (1956).

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