Effect of heavy doping on the optical properties and band structure of GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.47.7071/fulltext
Reference17 articles.
1. Electronic Properties of Doped Semiconductors
2. Electroreflectance at a Semiconductor-Electrolyte Interface
3. Concentration dependence of the refractive index for n ‐ and p ‐type GaAs between 1.2 and 1.8 eV
4. Concentration dependence of the absorption coefficient forn− andp−type GaAs between 1.3 and 1.6 eV
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