REFLECTANCE OF GaAs, GaP, AND THE GaAs1−x Px ALLOYS

Abstract

The reflectance of GaAs, GaP, and the GaAs1−x Px alloys has been measured between 2.5 eV and 20 eV at room temperature and between 2.5 eV and 6 eV at liquid-nitrogen temperature. The transitions E1, E1 + Δ1, Ecp, E0′, E2, E1′, E1′ + Δ1′, and d1 have all been observed and their behavior as a function of alloy composition is presented. The data have been used to give a more detailed picture of the band structure of GaAs and GaP and of the way in which the band structure varies with alloying. In particular, the spin-orbit splittings of the valence band are discussed and the relevance of the 2/3 spin-orbit splitting law considered.