Interband critical points of GaAs and their temperature dependence
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.35.9174/fulltext
Reference109 articles.
1. Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV
2. Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors
3. Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eV
4. Resolved Free-Exciton Transitions in the Optical-Absorption Spectrum of GaAs
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