Modeling of Threading Dislocation Density Reduction in Heteroepitaxial Layers I. Geometry and Crystallography
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. Plastic relaxation and relaxed buffer layers for semiconductor epitaxy
2. Scaling laws for the reduction of threading dislocation densities in homogeneous buffer layers
3. Dislocation Mechanisms of Relaxation in Strained Epitaxial Films
4. Materials Fundamentals of Molecular Beam Epitaxy, Academic Press, New York 1993.
5. A line-integral representation for the stresses due to an arbitrary dislocation in an isotropic half-space
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