Influence of SiSi Bonds on the Local Electronic Density of States of a-SiO2-Reference-Cited by-同舟云学术

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Influence of SiSi Bonds on the Local Electronic Density of States of a-SiO2

Published:1984-06-01 Issue:2 Volume:123 Page:663-669
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:phys. stat. sol. (b)

Author:

Grafe T.,Strehlow R.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Theory of defects in vitreous silicon dioxide

2. in: The Physics of SiO2 and Its Interfaces, Ed. Pergamon Press, New York 1978 (p. 232).

3. Optical properties of non-crystalline Si, SiO, SiOx and SiO2

4. , and , see [2] (p. 321).

5. Dissertation, Berlin 1984 (unpublished).

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Cluster-Bethe-Lattice Approach to the Electronic Structure of Intrinsic Defects in v-SiO2;physica status solidi (b);1986-08-01

2. Theoretical Study of the Gradual Chemical Transition at the SiSiO2 Interface. II. Electronic Density of States Calculations;physica status solidi (b);1986-07-01

3. Application of molecular models to electronic structure calculations of defects in oxide crystals;physica status solidi (b);1986-06-01

4. Theory of Intrinsic Defects in a-SiO2;MRS Proceedings;1985

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