Application of molecular models to electronic structure calculations of defects in oxide crystals
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference52 articles.
1. Theory of defects in vitreous silicon dioxide
2. Bethe-Lattice Approach to the Electronic Structure of Intrinsic Defects in v-SiO2
3. Influence of SiSi Bonds on the Local Electronic Density of States of a-SiO2
4. Intrinsic defects and hydroxyl groups in a-SiO2
5. EPR and ab initio SCF–MO studies of the Si⋅H–Si system in the E′4 center of α‐quartz
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Quantum chemical simulations of hole self-trapping in corundum;Journal of Physics: Condensed Matter;1992-09-14
2. Models of the self-trapped exciton and nearest-neighbor defect pair inSiO2;Physical Review B;1990-11-15
3. Chemical reactivity of ionic clusters formed by laser ablation of solid oxides utilized in superconducting materials;International Journal of Mass Spectrometry and Ion Processes;1990-01
4. Quantum-chemical approach to defect formation processes in non-metallic crystals;Radiation Effects and Defects in Solids;1989-12
5. Molecular models in ab initio studies of solids and surfaces: from ionic crystals and semiconductors to catalysts;Chemical Reviews;1989-01-01
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