Strain Effects on the Band Structure of Si/Si1–xGex (001) Superlattices
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference43 articles.
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3. Enhancement- and depletion-mode p-channel GexSi1-xmodulation-doped FET's
4. Waveguide infrared photodetectors on a silicon chip
5. Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSi/SixGe1−xSuperlattices
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3. Energy band structure of strained Si1−xCx alloys on Si (001) substrate;Journal of Applied Physics;2002-10
4. Optical properties ofSimGenssuperlattices: A CPA treatment of the interface diffusion;Physical Review B;1997-04-15
5. Optimization of Si/sub 1-x/Ge/sub x//Si waveguide photodetectors operating at λ=1.3 μm;Journal of Lightwave Technology;1996-05
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