Variation of Self-Seeded Germanium Nanowire Electronic Device Functionality due to Synthesis Condition Determined Surface States-Reference-Cited by-同舟云学术

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Variation of Self-Seeded Germanium Nanowire Electronic Device Functionality due to Synthesis Condition Determined Surface States

Published:2015-02-17 Issue:5 Volume:2 Page:1400469
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv. Mater. Interfaces

Author:

Connaughton Stephen¹²,Hobbs Richard²³,Lotty Olan²³,Holmes Justin D.²³,Krstić Vojislav¹²⁴

Affiliation:

1. School of Physics; Trinity College Dublin; College Green Dublin 2 Ireland

2. Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN); AMBER at CRANN; Trinity College Dublin; College Green Dublin 2 Ireland

3. Materials Chemistry & Analysis Group; Department of Chemistry; University College Cork; Cork Ireland

4. Department of Physics; Chair for Applied Physics; Friedrich-Alexander-University Erlangen-Nürnberg; 91058 Erlangen Germany

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Reference53 articles.

1. Germanium Nanowire Growth via Simple Vapor Transport

2. Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics

3. Academic and industry research progress in germanium nanodevices

4. Parallel Core−Shell Metal-Dielectric-Semiconductor Germanium Nanowires for High-Current Surround-Gate Field-Effect Transistors

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth and analysis of the tetragonal (ST12) germanium nanowires;Nanoscale;2022

2. A Review of Self-Seeded Germanium Nanowires: Synthesis, Growth Mechanisms and Potential Applications;Nanomaterials;2021-08-04

3. Low temperature humidity sensor based on Ge nanowires selectively grown on suspended microhotplates;Sensors and Actuators B: Chemical;2017-05

4. Fingerprints of a size-dependent crossover in the dimensionality of electronic conduction in Au-seeded Ge nanowires;Beilstein Journal of Nanotechnology;2016-11-02

5. Diameter-driven crossover in resistive behaviour of heavily doped self-seeded germanium nanowires;Beilstein Journal of Nanotechnology;2016-09-13

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