Energy Offset Between Silicon Quantum Structures: Interface Impact of Embedding Dielectrics as Doping Alternative-Reference-Cited by-同舟云学术

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Energy Offset Between Silicon Quantum Structures: Interface Impact of Embedding Dielectrics as Doping Alternative

Published:2014-11-11 Issue:9 Volume:1 Page:1400359
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv. Mater. Interfaces

Author:

König Dirk¹,Hiller Daniel²,Gutsch Sebastian²,Zacharias Margit²

Affiliation:

1. ACAP University of New South Wales; Sydney NSW 2052 Australia

2. IMTEK University of Freiburg; Georges-Koehler-Allee 103 D-79110 Freiburg Germany

Funder

Australian Renewable Energy Agency (ARENA)

Australian Centre of Advanced Photovoltaics (ACAP)

DFG Reinhart-Koselleck-Project

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Reference49 articles.

1. Doping efficiency in freestanding silicon nanocrystals from the gas phase: Phosphorus incorporation and defect-induced compensation

2. First-principles study ofn- andp-doped silicon nanoclusters

3. Size Limits on Doping Phosphorus into Silicon Nanocrystals

4. Donor deactivation in silicon nanostructures

5. Exchange-Coupled Donor Dimers in Nanocrystal Quantum Dots

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2. Fabrication of Ultrasmall Si Encapsulated in Silicon Dioxide and Silicon Nitride as Alternative to Impurity Doping;physica status solidi (a);2023-06-08

3. Toward Low‐Power Cryogenic Metal‐Oxide Semiconductor Field‐Effect Transistors;physica status solidi (a);2023-05-31

4. Origin and Quantitative Description of the NESSIAS Effect at Si Nanostructures;Advanced Physics Research;2023-03-18

5. Analytic description of nanowires II: morphing of regular cross sections for zincblende- and diamond-structures to match arbitrary shapes;Acta Crystallographica Section B Structural Science, Crystal Engineering and Materials;2022-07-15

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