Decreasing Defect-State Density of Al2 O3 /Ga x In1− x As Device Interfaces with InO x Structures-Reference-Cited by-同舟云学术

Decreasing Defect-State Density of Al2 O3 /Ga x In1− x As Device Interfaces with InO x Structures

Published:2017-09-19 Issue:22 Volume:4 Page:1700722
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv. Mater. Interfaces

Author:

Mäkelä Jaakko¹^ORCID,Tuominen Marjukka¹^ORCID,Dahl Johnny¹,Granroth Sari¹,Yasir Muhammad¹^ORCID,Lehtiö Juha-Pekka¹,Uusitalo Rami-Roope¹,Kuzmin Mikhail¹²,Punkkinen Marko¹,Laukkanen Pekka¹^ORCID,Kokko Kalevi¹^ORCID,Félix Roberto³,Lastusaari Mika⁴^ORCID,Polojärvi Ville⁵,Lyytikäinen Jari⁵,Tukiainen Antti⁵^ORCID,Guina Mircea⁵

Affiliation:

1. Department of Physics and Astronomy; University of Turku; FI-20014 Turku Finland

2. Ioffe Physical-Technical Institute; Russian Academy of Sciences; St. Petersburg 194021 Russian Federation

3. Renewable Energy; Helmholtz-Zentrum Berlin für Materialien und Energie GmbH; Hahn-Meitner-Platz 1 D-14109 Berlin Germany

4. Department of Chemistry; University of Turku; FI-20014 Turku Finland

5. Optoelectronics Research Centre; Tampere University of Technology; FI-33101 Tampere Finland

Funder

University of Turku Graduate School

Tekes

Academy of Finland

HZB

Seventh Framework Programme