Charge Transport Characteristics of Surface‐Complexed Quantum Dot in a Thin Film Transistor-Reference-Cited by-同舟云学术

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Charge Transport Characteristics of Surface‐Complexed Quantum Dot in a Thin Film Transistor

Published:2020-01 Issue:4 Volume:7 Page:1901665
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv. Mater. Interfaces

Author:

Gogoi Kasturi¹,Pramanik Sabyasachi²³,Chattopadhyay Arun¹²^ORCID

Affiliation:

1. Centre for Nanotechnology Indian Institute of Technology Guwahati Guwahati 781039 Assam India

2. Department of Chemistry Indian Institute of Technology Guwahati Guwahati 781039 Assam India

3. Department of Chemistry National Institute of Technology Sikkim Sikkim 737139 India

Funder

Ministry of Electronics and Information technology

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.201901665

Reference56 articles.

1. High-Performance, Solution-Processed Quantum Dot Light-Emitting Field-Effect Transistors with a Scandium-Incorporated Indium Oxide Semiconductor

2. High Efficiency Light-Emitting Transistor with Vertical Metal-Oxide Heterostructure

3. Brightness Enhancement in Pulsed-Operated Perovskite Light-Emitting Transistors

4. Simultaneous Tenfold Brightness Enhancement and Emitted-Light Spectral Tunability in Transparent Ambipolar Organic Light-Emitting Transistor by Integration of High-k Photonic Crystal

5. High-Mobility Ambipolar Transport in Organic Light-Emitting Transistors

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3. Surface Engineering of Quantum Dots for Self-Powered Ultraviolet Photodetection and Information Encryption;Langmuir;2022-02-15

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