Vertical Organic Ferroelectric Synaptic Transistor for Temporal Information Processing-Reference-Cited by-同舟云学术

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Vertical Organic Ferroelectric Synaptic Transistor for Temporal Information Processing

Published:2022-09-12 Issue:30 Volume:9 Page:2201421
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv Materials Inter

Author:

Sun Yanmei¹²³^ORCID,Wang Yufei¹²³,Yuan Qi¹²³,He Nian¹²³,Wen Dianzhong¹²³

Affiliation:

1. School of Electronic Engineering Heilongjiang University Harbin 150080 China

2. Heilongjiang Provincial Key Laboratory of Micro‐nano Sensitive Devices and Systems Heilongjiang University Harbin 150080 China

3. HLJ Province Key Laboratories of Senior‐Education for Electronic Engineering Heilongjiang University Harbin 150080 China

Funder

Natural Science Foundation of Heilongjiang Province

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.202201421

Reference72 articles.

1. Small‐Molecule‐Based Organic Field‐Effect Transistor for Nonvolatile Memory and Artificial Synapse

2. Negative Photoconductance Effect: An Extension Function of the TiO x ‐Based Memristor

3. Organic Synapses for Neuromorphic Electronics: From Brain-Inspired Computing to Sensorimotor Nervetronics

4. ABO3 multiferroic perovskite materials for memristive memory and neuromorphic computing

5. Synaptic computation

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