High-performance integrated passive technology by advanced SI-GaAs-based fabrication for RF and microwave applications-Reference-Cited by-同舟云学术

High-performance integrated passive technology by advanced SI-GaAs-based fabrication for RF and microwave applications

Published:2010-01-08 Issue:3 Volume:52 Page:618-623
ISSN:0895-2477
Container-title:Microwave and Optical Technology Letters
language:en
Short-container-title:Microw. Opt. Technol. Lett.

Author:

Wang Cong,Lee Ji-Hoon,Kim Nam-Young

Funder

Nano IP/SoC Promotion Group of the Seoul R&BD Program

MKE

Korea under the ITRC

IITA

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/mop.25018/fullpdf

Reference10 articles.

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3. Integrating passive components with active circuits using standard silicon process for millimeter-wave applications;Meng;IEEE Global Symp Millimeter Waves,2008

4. Fabrication of application specific integrated passive devices using wafer level packaging technologies;Zoschke;IEEE Trans Adv Packag,2007

5. RF-IPD directional coupler for mobile RFID handset applications;Jung;Electron Lett,2007

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