Thermally enhanced GaN hybrid-IC power amplifier using embedded IC process in a copper sheet

Author:

Yoon Tae-Woong1,Kim Dong-Su1,Yook Jong-Min1ORCID

Affiliation:

1. Korea Electronics Technology Institute; ICT Device and Packaging Research Center; Seongnam-si Gyeonggi-do South Korea

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. An X-band RLC matched power amplifier using quasi-MMIC technology;An;Microwave Opt Technol Lett.,2015

2. SThM temperature mapping and nonlinear thermal resistance evolution with bias on AlGaN/GaN HEMT devices;Aubry;IEEE Trans Electron Devices.,2007

3. Thermal conductivity of GaN crystals in 4.2-300 K range;Jeżowski;Solid State Commun.,2003

4. Prejs A Wood S Pengelly R Pribble W. 2009

5. Novel packaging, cooling and interconnection method for GaN high performance power amplifiers and GaN based RF front-ends;Margomenos Micovic;EuMIC.,2012

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