Laser CVD of Nanodisperse Ge–Sn Alloys Obtained by Dielectric Breakdown of SnH4/GeH4 Mixtures

Abstract

AbstractTEA CO2 laser‐induced dielectric breakdown of an equimolar mixture of gaseous stannane and germane in Ar allows decomposition of both metal hydrides and chemical vapour deposition of the nanostructured Ge/Sn films. Analysis of the films by FTIR and Raman spectroscopy, X‐ray diffraction analysis and electron microscopy revealed nanoregions of crystalline Sn and Sn‐rich Ge/Sn alloys surrounded by an amorphous Ge/Sn phase. The crystalline Ge/Sn nanoalloys contain different amounts of Sn incorporated into the Ge lattice and undergo changes in composition at temperatures as low as 200 °C.(© Wiley‐VCH Verlag GmbH & Co. KGaA, 69451 Weinheim, Germany, 2009)