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Efficient modeling of GaN HEMTs for linear and nonlinear circuits design

  • Published:2015-09-15 Issue:1 Volume:30 Page:e2100
  • ISSN:0894-3370
  • Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
  • language:en
  • Short-container-title:Int. J. Numer. Model.

Author:

Jarndal Anwar1,Kouki Ammar2

Affiliation:

1. Department of Electrical and Computer Engineering; University of Sharjah; Sharjah 27272 UAE

2. LACIME Lab; École de Technologie Supérieure; Montréal Québec H3C 1K3 Canada

Funder

University of Sharjah, Sharjah, UAE

École de technologie supérieure, Montréal, Canada

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation

Reference35 articles.

1. Device technologies for RF front-end circuits in next generation wireless communication;Feng;Proc IEEE,2004

2. Power amplifiers and transmitters for RF and microwave;Raab;IEEE Trans Microw Theor Tech,2002

3. GaN HFETs on silicon target wireless infrastructure market;Borges;Compd Semicond,2003

4. A review of GaN on SiC high electron-mobility power transistors and MMICs;Pengelly;IEEE Trans Microw Theor Tech,2012

Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative analysis of nonlinear behavioral models for GaN HEMTs based on machine learning techniques;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-09-29

2. Quasi-2-D Physical Modeling of GaN Microwave HEMTs for RF Applications;IEEE Transactions on Electron Devices;2022-11

3. Analysis and modeling of the kink effect in S22 based on support vector machine for GaN HEMTs;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2022-02-17

4. Reverse Intermodulation in Multi-Tone Array Transmitters;2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2020-11-16

5. Experimental insight into the temperature effects on DC and microwave characteristics for a GaAs pHEMT in multilayer 3‐D MMIC technology;International Journal of RF and Microwave Computer-Aided Engineering;2020-08-03
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