Photoluminescence studies of self-assembled InAs quantum dots formed on InGaAs/GaAs quantum well
Author:
Publisher
IOP Publishing
Subject
Physics and Astronomy (miscellaneous),Instrumentation
Reference15 articles.
1. Novel InGaAs/GaAs quantum dot structures formed in tetrahedral‐shaped recesses on (111)B GaAs substrate using metalorganic vapor phase epitaxy
2. Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers
3. Observation of quantum confinement by strain gradients
4. Strain‐induced carrier confinement in a buried stressor structure
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1. InAlGaAs encapsulation of MOVPE-grown InAs quantum dots on InP(0 0 1) substrate;Journal of Crystal Growth;2020-02
2. Enhanced electroluminescence of all‐inorganic colloidal quantum dot light‐emitting diode by optimising the MoO 3 intermediate layer;Micro & Nano Letters;2014-06
3. Revealing exciton dephasing and transport dynamics in semiconductor quantum well - quantum dot systems using optical 2D Fourier transform spectroscopy;SPIE Proceedings;2012-02-09
4. Exciton relaxation and coupling dynamics in a GaAs/AlxGa1−xAs quantum well and quantum dot ensemble;Physical Review B;2011-06-27
5. Photoluminescence of self-assembled InAs/GaAs quantum dots excited by ultraintensive femtosecond laser;Journal of Applied Physics;2009-11-15
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