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InAlGaAs encapsulation of MOVPE-grown InAs quantum dots on InP(0 0 1) substrate

  • Published:2020-02 Issue: Volume:531 Page:125342
  • ISSN:0022-0248
  • Container-title:Journal of Crystal Growth
  • language:en
  • Short-container-title:Journal of Crystal Growth

Author:

Hasan SamiulORCID,Han Han,Korytov Maxim,Pantouvaki Marianna,Van Campenhout Joris,Merckling Clement,Vandervorst Wilfried

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference46 articles.

1. High-speed low-noise InAs/InAlGaAs/InP 1.55-μm quantum-dot lasers;Gready;IEEE Photon. Technol. Lett.,2012

2. 1.3 μm room-temperature GaAs-based quantum-dot laser;Huffaker;Appl. Phys. Lett.,1998

3. InAs – InAlGaAs quantum dot DFB lasers;Inp;Technology,2006

4. Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate;Liu;Nat. Photon.,2011

5. Growth of InAs/InP-based quantum dots for 1.55μm laser applications;Poole;J. Cryst. Growth,2009

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomic-Scale Multimodal Characterization of Self-Assembled InAs/InGaAlAs Quantum Dots;The Journal of Physical Chemistry Letters;2024-03-29

2. Materials for emergent silicon-integrated optical computing;Journal of Applied Physics;2021-08-21

3. Morphology and Structural Properties of AlGaInSbAs Epitaxial Films Grown on InAs Substrates;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2021-05

4. Encapsulation study of MOVPE grown InAs QDs by InP towards 1550 nm emission;Journal of Crystal Growth;2021-03

5. InAs/InP Quantum Dots in Etched Pits by Droplet Epitaxy in Metalorganic Vapor Phase Epitaxy;physica status solidi (RRL) – Rapid Research Letters;2020-06-08
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