Photoluminescence of self-assembled InAs/GaAs quantum dots excited by ultraintensive femtosecond laser
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3264624
Reference32 articles.
1. Effect of wetting layers on the strain and electronic structure of InAs self-assembled quantum dots
2. Carrier relaxation and thermal activation of localized excitons in self-organized InAs multilayers grown on GaAs substrates
3. Carrier thermal escape and retrapping in self-assembled quantum dots
4. Morphology and composition of highly strained InGaAs and InGaAsN layers grown on GaAs substrate
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. An explanation for the non-monotonic temperature dependence of the photoluminescence spectral features of self-organized InAs QDs;Journal of Luminescence;2023-01
2. Hybrid strain-coupled multilayer SK and SML InAs/GaAs quantum dot heterostructure: Enabling higher absorptivity and strain minimization for enhanced optical and structural characteristics;Journal of Luminescence;2021-05
3. Swift heavy ion induced capacitance and dielectric properties of Ni/n-GaAs Schottky diode;Current Applied Physics;2015-11
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