1. Diffusion in strained SiGe;Cowern N.E.B.;Physical Review Letters,1994
2. Ion implantation and transient enhanced diffusion
3. Boron diffusion across silicon‐silicon germanium boundaries;Lever R.F.;Journal of Applied Physics,1999
4. Studies of boron diffusivity in strained Si1‐xGex epitaxial layers;Rajendran K.;Journal of Applied Physics,2001
5. Growth and strain compensation effects in the ternary Si1‐x‐yGexCy alloy system;Eberl K.;Applied Physics Letters,1992