Resistivity and lifetime variation along commercially grown Ga- and B-Doped Czochralski Si ingots and its effect on light-induced degradation and performance of solar cells-Reference-Cited by-同舟云学术

Resistivity and lifetime variation along commercially grown Ga- and B-Doped Czochralski Si ingots and its effect on light-induced degradation and performance of solar cells

Published:2006 Issue:2 Volume:14 Page:125-134
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog. Photovolt: Res. Appl.

Author:

Meemongkolkiat V.,Nakayashiki K.,Rohatgi A.,Crabtree G.,Nickerson J.,Jester T. L.

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference25 articles.

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2. , , , . 21% efficient solar cells processed from Czochralski grown silicon. Proceedings of the 13th European Photovoltaic Solar Energy Conference. Nice, October 1995; 9–12.

3. , . Investigation of carrier lifetime instabilities in Cz-grown silicon. Conference Record, 26th IEEE Photovoltaic Specialists Conference. Anaheim, September/October 1997; 13–18.

4. , , , . On the degradation of Cz-silicon solar cells. Proceedings of the 2nd World Conference on Photovoltaic Solar Energy Conversion. Vienna, July 1998; 1343–1346.

5. Comparison of boron- and gallium-doped p-type Czochralski silicon for photovoltaic application

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