Magnetic‐TEGFET: Transistor Without a Gate-Reference-Cited by-同舟云学术

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Magnetic‐TEGFET: Transistor Without a Gate

Published:2019-01-15 Issue:6 Volume:256 Page:1800509
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Raymond Andre¹,Chaubet C.¹,Delgard Adrien¹,Chenaud Boris¹,Cavanna Antonella²,Harmand Jean C.²,Zawadzki Wlodzimierz³

Affiliation:

1. Laboratoire Charles Coulomb (L2C) UMR 5221, CNRSUniversité de MontpellierMontpellier34095France

2. Centre de Nanosciences et de Nanotechnologies (C2N)CNRS, Université Paris‐SudUniversité Paris‐Saclay, Route de Nozay91460MarcoussisFrance

3. Institute of PhysicsPolish Academy of SciencesAl. Lotnikow 32/4602668WarsawPoland

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201800509

Reference16 articles.

1. Ultra-low noise high electron mobility transistors for high-impedance and low-frequency deep cryogenic readout electronics

2. Magnetic two-dimensional field effect transistor

3. Magnetic thaw down and boil-off of electrons in the quantum Hall effect regime due to magnetoacceptors in GaAs/GaAlAs heterostructures

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Lateral Gate 2-D Electron Gas Field-Effect Transistor;IEEE Transactions on Electron Devices;2023-08

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