X‐Ray Diffraction Microstrain Analysis for Extraction of Threading Dislocation Density of GaN Films Grown on Silicon, Sapphire, and SiC Substrates-Reference-Cited by-同舟云学术

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X‐Ray Diffraction Microstrain Analysis for Extraction of Threading Dislocation Density of GaN Films Grown on Silicon, Sapphire, and SiC Substrates

Published:2020-04 Issue:4 Volume:257 Page:1900579
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Yon Victor¹^ORCID,Rochat Névine¹,Charles Matthew¹,Nolot Emmanuel¹,Gergaud Patrice¹

Affiliation:

1. CEA-Leti (Laboratoire d'electronique des technologies de l'information)Université Grenoble Alpes 38000 Grenoble France

Funder

Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201900579

Reference28 articles.

1. Power electronics with wide bandgap materials: Toward greener, more efficient technologies

2. Effect of stress voltage on the dynamic buffer response of GaN-on-silicon transistors

3. Effects of Traps Formed by Threading Dislocations on Off-State Breakdown Characteristics in GaN Buffer Layer in AlGaN/GaN Heterostructure Field-Effect Transistors

4. Imaging and counting threading dislocations in c-oriented epitaxial GaN layers

5. Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers

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