Imaging and counting threading dislocations in c-oriented epitaxial GaN layers-Reference-Cited by-同舟云学术

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Imaging and counting threading dislocations in c-oriented epitaxial GaN layers

Published:2013-02-04 Issue:3 Volume:28 Page:035006
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Khoury M,Courville A,Poulet B,Teisseire M,Beraudo E,Rashid M J,Frayssinet E,Damilano B,Semond F,Tottereau O,Vennéguès P

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/28/i=3/a=035006/pdf

Reference23 articles.

1. High dislocation densities in high efficiency GaN‐based light‐emitting diodes

2. Defect sensitive etching of nitrides: appraisal of methods

3. X-ray diffraction of III-nitrides

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