Optical studies of non-polar m-plane (11¯00) InGaN/GaN multi-quantum wells grown on freestanding bulk GaN-Reference-Cited by-同舟云学术

Optical studies of non-polar m-plane (11¯00) InGaN/GaN multi-quantum wells grown on freestanding bulk GaN

Published:2015-01-20 Issue:5 Volume:252 Page:965-970
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Sutherland Danny¹,Zhu Tongtong²,Griffiths James T.²,Tang Fengzai²,Dawson Phil¹,Kundys Dmytro¹,Oehler Fabrice²,Kappers Menno J.²,Humphreys Colin J.²,Oliver Rachel A.²

Affiliation:

1. School of Physics and Astronomy; Photon Science Institute; The University of Manchester; Manchester M13 9PL UK

2. Department of Material Science and Metallurgy; University of Cambridge; 27 Charles Babbage Road Cambridge CB3 0FS UK

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference40 articles.

1. Polarization anisotropy in the electroluminescence of m-plane InGaN–GaN multiple-quantum-well light-emitting diodes

2. Effect of Biaxial Strain on Cubic and Hexagonal GaN Analyzed by Tight-Binding Method

3. Polarization anisotropy of the photoluminescence of M-plane (In,Ga)N/GaN multiple quantum wells

4. Optical polarization characteristics ofm-oriented InGaN/GaN light-emitting diodes with various indium compositions in single-quantum-well structure

5. Dynamics of polarized photoluminescence in m-plane InGaN/GaN quantum wells

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Basics of simulations and carrier localization effects in semiconductor materials;Encyclopedia of Condensed Matter Physics;2024

2. Photoluminescence Study of Carrier Localization and Recombination in Nearly Strain‐Balanced Nonpolar InGaN/AlGaN Quantum Wells;physica status solidi (b);2022-03-06

3. Photoluminescence study of non-polar m-plane InGaN and nearly strain-balanced InGaN/AlGaN superlattices;Journal of Applied Physics;2020-05-14

4. Reduced radiative emission for wide nonpolar III-nitride quantum wells;Physical Review B;2019-05-29

5. On the optical polarization properties of semipolar ( 20 2 ¯ 1 ) and ( 20 2 ¯ 1 ¯ ) InGaN/GaN quantum wells;Journal of Applied Physics;2018-02-28