Low‐to‐Mid Al Content ( x = 0–0.56) Al x In 1− x N Layers Deposited on Si(100) by Radio‐Frequency Sputtering
Author:
Affiliation:
1. Photonics Engineering GroupUniversity of Alcalá Alcalá de Henares 28871 Spain
2. Applied Physics Department IIIComplutense University of Madrid Madrid 28040 Spain
Funder
Ministerio de Ciencia e Innovación
Universidad de Alcalá
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201900575
Reference26 articles.
1. III-nitrides for energy production: photovoltaic and thermoelectric applications
2. AlInN for Vertical Power Electronic Devices
3. Thermal Oxidation of AlInN for III-Nitride Electronic and Optoelectronic Devices
4. Mechanical properties of single-phase Al1−In N films across the compositional range (0 ≤ x ≤ 0.7) grown by radio-frequency magnetron sputtering
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