Surface morphology control of nonpolarm-plane AlN homoepitaxial layers by flow-rate modulation epitaxy
Author:
Affiliation:
1. NTT Basic Research Laboratories; NTT Corporation; Atsugi Kanagawa 243-0198 Japan
Funder
JSPS KAKENHI
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Spontaneous polarization and piezoelectric constants of III-V nitrides
2. Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells
3. Strong optical polarization in nonpolar(11¯00)AlxGa1−xN/AlN quantum wells
4. Deep-ultraviolet light emission properties of nonpolar M-plane AlGaN quantum wells
5. A comparative study of nonpolar a-plane and m-plane AlN grown on 4H-SiC by plasma-assisted molecular-beam epitaxy
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1. Semipolar (11–22) AlN Grown on m-Plane Sapphire by Flow-Rate Modulation Epitaxy for Vacuum-Ultraviolet Photodetection;Crystal Growth & Design;2022-02-03
2. Structural characteristics of m-plane AlN substrates and homoepitaxial films;Journal of Crystal Growth;2019-02
3. Kinetic instability of AlGaN alloys during MBE growth under metal-rich conditions on m-plane GaN miscut towards the -c axis;Journal of Applied Physics;2018-04-28
4. Sandwich method to grow high quality AlN by MOCVD;Journal of Physics D: Applied Physics;2018-02-07
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