A comparative study of nonpolar a-plane and m-plane AlN grown on 4H-SiC by plasma-assisted molecular-beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
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3. Defect reduction in (112̄0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy
4. Growth of M-plane GaN on γ-: the role of Ga adsorption/desorption
5. Growth of AlN $(11\bar{2}0)$ on 6H-SiC $(11\bar{2}0)$ by Molecular-Beam Epitaxy
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Kinetic instability of AlGaN alloys during MBE growth under metal-rich conditions on m-plane GaN miscut towards the -c axis;Journal of Applied Physics;2018-04-28
2. Deep-ultraviolet light emission from 4H-AlN/4H-GaN short-period superlattice grown on 4H-SiC(112¯0);Applied Physics Letters;2018-01
3. Surface morphology control of nonpolarm-plane AlN homoepitaxial layers by flow-rate modulation epitaxy;physica status solidi (b);2016-11-28
4. Ab initio-based approach to structural modulation on 4H-SiC(112¯0) during MBE growth;Physica E: Low-dimensional Systems and Nanostructures;2010-09
5. In-plane structural anisotropy and polarized Raman-active mode studies of nonpolar AlN grown on 6H-SiC by low-pressure hydride vapor phase epitaxy;Journal of Crystal Growth;2010-02
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