Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64 Ga0.36 N Double Quantum Wells
Author:
Affiliation:
1. Department of Physics, University of Paderborn; Warburger Strasse 100 33098 Paderborn Germany
2. Institut für Festkörperphysik, Technische Universität Berlin; Strasse des 17. Juni 135 10623 Berlin Germany
Funder
Deutsche Forschungsgemeinschaft
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201700373/fullpdf
Reference26 articles.
1. Intersubband absorption of cubic GaN/Al(Ga)N quantum wells in the near-infrared to terahertz spectral range
2. Intersubband absorption at ∼2.1 [micro sign]m in A-plane GaN∕AlN multiple quantum wells
3. THz intersubband transitions in AlGaN/GaN multi-quantum-wells
4. Semipolar GaN grown on foreign substrates: a review
5. MBE growth and applications of cubic AlN/GaN quantum wells
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