THz intersubband transitions in AlGaN/GaN multi-quantum-wells-Reference-Cited by-同舟云学术

THz intersubband transitions in AlGaN/GaN multi-quantum-wells

Published:2014-02-14 Issue:4 Volume:211 Page:761-764
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Beeler Mark¹,Bougerol Catherine²,Bellet-Amalaric Edith¹,Monroy Eva¹

Affiliation:

1. CEA-CNRS Group «Nanophysique et Semiconducteurs»; INAC-SP2M; CEA-Grenoble 17 rue des Martyrs, 38054 Grenoble Cedex 9 France

2. CEA-CNRS Group «Nanophysique et Semiconducteurs»; Institut Néel-CNRS; 25 rue des Martyrs, 38042 Grenoble Cedex 9 France

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Monte Carlo simulation of terahertz quantum cascade laser structures based on wide-bandgap semiconductors

2. Design and fabrication of terahertz quantum cascade laser structure based on III-nitride semiconductors

3. Terahertz dual-wavelength quantum cascade laser based on GaN active region

4. III-nitride semiconductors for intersubband optoelectronics: a review

5. Midinfrared intersubband absorption in GaN/AlGaN superlattices on Si(111) templates

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