Fast and Slow Stages of Lifetime Degradation by Boron–Oxygen Centers in Crystalline Silicon-Reference-Cited by-同舟云学术

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Fast and Slow Stages of Lifetime Degradation by Boron–Oxygen Centers in Crystalline Silicon

Published:2019-08-25 Issue:1 Volume:257 Page:1900167
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Schmidt Jan¹²^ORCID,Bothe Karsten¹,Voronkov Vladimir V.³,Falster Robert⁴

Affiliation:

1. Department of PhotovoltaicsInstitute for Solar Energy Research Hamelin (ISFH) Am Ohrberg 1 Emmerthal 31860 Germany

2. Department of Solar EnergyInstitute of Solid-State PhysicsLeibniz University Hannover Appeltr. 2 Hannover 30167 Germany

3. Global Wafers via Nazionale 59 Merano 39012 Italy

4. 4 Harrison's Lane Woodstock OX20 1SS UK

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201900167

Reference41 articles.

1. H.Fischer W.Pschunder Proc. 10th IEEE Photovoltaic Specialists Conf. IEEE New York1974 p.404.

2. J.Schmidt A. G.Aberle R.Hezel Proc. 26th IEEE Photovoltaic Specialists Conf. IEEE New York1997 p.13.

3. Electronic properties of the metastable defect in boron-doped Czochralski silicon: Unambiguous determination by advanced lifetime spectroscopy

4. Electronically activated boron-oxygen-related recombination centers in crystalline silicon

5. Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline silicon

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