Impact of dislocations and defects on the relaxation behavior of InGaN/GaN multiple quantum wells grown on Si and sapphire substrates-Reference-Cited by-同舟云学术

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Impact of dislocations and defects on the relaxation behavior of InGaN/GaN multiple quantum wells grown on Si and sapphire substrates

Published:2015-03-25 Issue:5 Volume:252 Page:917-922
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Yoshida Hisashi¹,Hikosaka Toshiki¹,Nago Hajime¹,Nunoue Shinya¹

Affiliation:

1. Corporate Research and Development Center; Toshiba Corporation 1; Komukai-Toshiba-cho, Saiwai-ku Kawasaki 212-8582 Japan

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

2. Front Matter: Volume 8278

3. High-Quality GaN on Si Substrate Using AlGaN/AlN Intermediate Layer

4. Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness

5. Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy

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1. Crystal Quality and Efficiency Engineering of InGaN‐Based Red Light‐Emitting Diodes;physica status solidi (b);2024-05-28

2. Efficiency and Forward Voltage of Blue and Green Lateral LEDs with V-shaped Defects and Random Alloy Fluctuation in Quantum Wells;Physical Review Applied;2022-01-25

3. Recent progress in red light-emitting diodes by III-nitride materials;Semiconductor Science and Technology;2021-11-26

4. Effects of hydrogen etching on stress control in AlN interlayer inserted GaN MOVPE on Si;Semiconductor Science and Technology;2017-06-08

5. Reduction of basal plane defects in (11-22) semipolar InGaN/GaN MQWs fabricated on patterned (113) Si substrates by introducing AlGaN barrier layers;physica status solidi (a);2017-03-22

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