Reduction of basal plane defects in (11-22) semipolar InGaN/GaN MQWs fabricated on patterned (113) Si substrates by introducing AlGaN barrier layers-Reference-Cited by-同舟云学术

Reduction of basal plane defects in (11-22) semipolar InGaN/GaN MQWs fabricated on patterned (113) Si substrates by introducing AlGaN barrier layers

Published:2017-03-22 Issue:8 Volume:214 Page:1600823
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Uesugi Kenjiro¹,Hikosaka Toshiki¹,Ono Hiroshi¹,Sakano Tatsunori¹,Nunoue Shinya¹

Affiliation:

1. Corporate Research & Development Center; Toshiba Corporation; 1 Komukai Toshiba-cho Saiwai-Ku Kawasaki 212-8582 Japan

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Reduction of threading dislocation by recoating GaN island surface with SiN for high-efficiency GaN-on-Si-based LED

2. Impact of dislocations and defects on the relaxation behavior of InGaN/GaN multiple quantum wells grown on Si and sapphire substrates

3. Performance enhancement of blue light-emitting diodes with InGaN/GaN multi-quantum wells grown on Si substrates by inserting thin AlGaN interlayers

4. Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells

5. Efficient radiative recombination from ⟨112¯2⟩ -oriented InxGa1−xN multiple quantum wells fabricated by the regrowth technique

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1. High quality nitride semiconductors grown on novel ScAlMgO4 substrates and their light emitting diodes;Japanese Journal of Applied Physics;2019-05-17

2. Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates;Nanoscale Research Letters;2018-08-22