First-principles study of the surface phase diagrams of GaN(0001) and (000−1) under oxide vapor phase epitaxy growth conditions-Reference-Cited by-同舟云学术

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First-principles study of the surface phase diagrams of GaN(0001) and (000−1) under oxide vapor phase epitaxy growth conditions

Published:2017-03-01 Issue:8 Volume:254 Page:1600706
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Kawamura Takahiro¹²,Kitamoto Akira²,Imade Mamoru²,Yoshimura Masashi²,Mori Yusuke²,Morikawa Yoshitada²,Kangawa Yoshihiro³,Kakimoto Koichi³

Affiliation:

1. Graduate School of Engineering; Mie University; 1577 Kurimamachiya-cho Tsu 514-8507 Japan

2. Graduate School of Engineering; Osaka University; 2-1 Yamadaoka Suita Osaka 565-0871 Japan

3. Research Institute for Applied Mechanics; Kyushu University; 6-1 Kasuga-koen Kasuga Fukuoka 816-8580 Japan

Funder

JSAP

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201600706/fullpdf

Reference22 articles.

1. THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN

2. Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy

3. Excellent crystallinity of truly bulk ammonothermal GaN

4. Ammonothermal growth of bulk GaN

5. Preparation of GaN Single Crystals Using a Na Flux

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An atomistic insight into reactions and free-energy profiles of NH3 and Ga on GaN surfaces during the epitaxial growth;Applied Surface Science;2022-10

2. High-rate OVPE-GaN crystal growth at a very high temperature of 1300 °C;Applied Physics Express;2022-02-14

3. Absolute surface energies of oxygen-adsorbed GaN surfaces;Journal of Crystal Growth;2020-11

4. First-principles study of polar, nonpolar, and semipolar GaN surfaces during oxide vapor phase epitaxy growth;Japanese Journal of Applied Physics;2018-10-23

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