Origin of unintentional gallium incorporation into AlN spacer layer grown by metalorganic vapor phase epitaxy
Author:
Affiliation:
1. Fujitsu Laboratories Ltd.; Atsugi; Kanagawa 243-0197 Japan
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201600496/fullpdf
Reference26 articles.
1. High-power GaN-HEMT with high three-terminal breakdown voltage for W-band applications
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